IRFS4321PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFS4321PBF
Manufacturer

Infineon
ChipWorker Part#

CW11281763
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 150V 83A
Documentation

Datasheet

IRFS4321PBF Global Supplier

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IRFS4321PBF Specifications

Attribute	Attribute Value

Part Number	IRFS4321PBF
Manufacturer	Infineon
ChipWorker Part#	CW11281763
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Power Rating	330 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.012 Ω
Polarity	N-Channel
Power Dissipation	330 W
Threshold Voltage	5 V
Input Capacitance	4460pF @50V
Drain to Source Voltage (Vds)	150 V
Continuous Drain Current (Ids)	83A
Rise Time	60 ns
Input Capacitance (Ciss)	4460pF @25V(Vds)
Input Power (Max)	350 W
Fall Time	35 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	350W (Tc)
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Size-Length	10.67 mm
Size-Width	9.65 mm
Size-Height	4.83 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFS4321PBF is a HEXFET® single N-channel Power MOSFET offers low gate charge improves the switching performance. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
Low RDS (ON) reduces losses
Improved diode recovery improves switching and EMI performance
Fully characterized avalanche SOA
30V Gate voltage rating improves robustness

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