IRG4PC40FDPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRG4PC40FDPBF
Manufacturer

Infineon
ChipWorker Part#

CW5521414
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 49A 160000mW 3Pin(3+Tab) TO-247AC Tube
Documentation

Datasheet

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IRG4PC40FDPBF Specifications

Attribute	Attribute Value

Part Number	IRG4PC40FDPBF
Manufacturer	Infineon
ChipWorker Part#	CW5521414
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	160 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	160 W
Rise Time	32.0 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	42 ns
Input Power (Max)	160 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	160000 mW
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Size-Length	15.9 mm
Size-Width	5.3 mm
Size-Height	20.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRG4PC40FDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for medium operating frequencies 1 to 5kHz in hard switching, >20kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations. The HEXFRED® diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.
Optimized for specific application conditions
Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs

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