IRG4PC40WPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRG4PC40WPBF
Manufacturer

Infineon
ChipWorker Part#

CW6914087
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

IGBT Single Transistor, 40A, 2.5V, 160W, 600V, TO-247AC, 3Pins
Documentation

Datasheet

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IRG4PC40WPBF Specifications

Attribute	Attribute Value

Part Number	IRG4PC40WPBF
Manufacturer	Infineon
ChipWorker Part#	CW6914087
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	160 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	160 W
Input Capacitance	1900 pF
Rise Time	23.0 ns
Breakdown Voltage (Collector to Emitter)	600 V
Thermal Resistance	40 ℃/W
Input Power (Max)	160 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	160000 mW
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Size-Length	15.9 mm
Size-Width	5.3 mm
Size-Height	20.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The IRG4PC40WPBF is an Insulated Gate Bipolar Transistor designed expressly for switch-mode power supply and PFC (power factor correction) applications. The latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability. It features lower switching losses allow more cost-effective operation than power MOSFETs up to 150kHz (hard switched mode). Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300kHz).
Industry-benchmark switching losses improve efficiency of all power supply topologies
50% Reduction of Eoff parameter
Low IGBT conduction losses
Particular benefit to single-ended converters and boost PFC topologies 150W and higher

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