IRG4PH50SPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRG4PH50SPBF
Manufacturer

Infineon
ChipWorker Part#

CW6330592
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 1200V 57A 200000mW 3Pin(3+Tab) TO-247AC Tube
Documentation

Datasheet

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IRG4PH50SPBF Specifications

Attribute	Attribute Value

Part Number	IRG4PH50SPBF
Manufacturer	Infineon
ChipWorker Part#	CW6330592
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	200 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	200 W
Input Capacitance	3600 pF
Rise Time	29.0 ns
Breakdown Voltage (Collector to Emitter)	1200 V
Thermal Resistance	40 ℃/W
Input Power (Max)	200 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200000 mW
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Size-Length	15.9 mm
Size-Width	5.3 mm
Size-Height	20.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRG4PH50SPBF is a 1200V DC to 1kHz IGBT optimizes for minimum saturation voltage and low operating frequencies (<1kHz). Latest generation IGBT design and construction offers tighter parameters distribution and exceptional reliability.

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