IRGB20B60PD1PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRGB20B60PD1PBF
Manufacturer

Infineon
ChipWorker Part#

CW13155637
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

IGBT Single Transistor, 40A, 2.5V, 215W, 600V, TO-220AB, 3Pins
Documentation

Datasheet

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IRGB20B60PD1PBF Specifications

Attribute	Attribute Value

Part Number	IRGB20B60PD1PBF
Manufacturer	Infineon
ChipWorker Part#	CW13155637
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	215 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	215 W
Rise Time	5.00 ns
Breakdown Voltage (Collector to Emitter)	600 V
Thermal Resistance	0.58℃/W (RθJC)
Reverse recovery time	28 ns
Input Power (Max)	215 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	215000 mW
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Size-Length	10.54 mm
Size-Width	4.69 mm
Size-Height	8.77 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The IRGB20B60PD1PBF is a 600V Warp2 IGBT with ultrafast soft recovery diode. Parallel operation for higher current applications and lower conduction losses and switching losses. Suitable for use in telecom and server SMPS, PFC and ZVS SMPS circuits.
Higher switching frequency up to 150kHz
NPT technology, positive temperature coefficient
Lower VCE (SAT)
Lower parasitic capacitances
Minimal tail current
HEXFRED ultra fast soft-recovery co-pack diode
Tighter distribution of parameters
Higher reliability

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