IRGB4620DPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRGB4620DPBF
Manufacturer

Infineon
ChipWorker Part#

CW13295240
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 600V 32A 140000mW 3Pin(3+Tab) TO-220AB Tube
Documentation

Datasheet

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IRGB4620DPBF Specifications

Attribute	Attribute Value

Part Number	IRGB4620DPBF
Manufacturer	Infineon
ChipWorker Part#	CW13295240
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	140 W
Number of Positions	3 Position
Power Dissipation	140 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	68 ns
Input Power (Max)	140 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	140000 mW
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Size-Length	10.67 mm
Size-Width	4.83 mm
Size-Height	16.51 mm
Operating Temperature	-40℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRGB4620DPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features high efficiency in a wide range of applications and switching frequencies, improved reliability due to rugged hard switching performance and higher power capability.
Low VCE (ON) and switch losses
Square RBSOA
Positive VCE (ON) temperature coefficient
Excellent current sharing in parallel operation
Enables short-circuit protection scheme
Environmentally-friendly
5µs Short-circuit SOA

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