IRL3103PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRL3103PBF
Manufacturer

Infineon
ChipWorker Part#

CW6590583
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 30V 64A
Documentation

Datasheet

IRL3103PBF Global Supplier

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IRL3103PBF Specifications

Attribute	Attribute Value

Part Number	IRL3103PBF
Manufacturer	Infineon
ChipWorker Part#	CW6590583
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	83 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.012 Ω
Polarity	N-Channel
Power Dissipation	83 W
Threshold Voltage	1 V
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	64A
Rise Time	120 ns
Input Capacitance (Ciss)	1650pF @25V(Vds)
Input Power (Max)	94 W
Fall Time	9.1 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	94W (Tc)
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Size-Length	10 mm
Size-Width	4.4 mm
Size-Height	15.65 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRL3103PBF is a HEXFET® N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
Advanced process technology
Dynamic dV/dt rating
Fast switching
Fully avalanche rating

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