IRL630PBF - VISHAY

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRL630PBF
Manufacturer

VISHAY
ChipWorker Part#

CW24261766
Category

MOSFET, MOSFET Transistor
RoHS

Lead free / RoHS Compliant
Description

TO-220-3 N-CH 200V 9A 400mΩ
Documentation

Datasheet

IRL630PBF Global Supplier

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IRL630PBF Specifications

Attribute	Attribute Value

Part Number	IRL630PBF
Manufacturer	VISHAY
ChipWorker Part#	CW24261766
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	400 mΩ
Polarity	N-Channel
Power Dissipation	74 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	200 V
Continuous Drain Current (Ids)	9.00 A
Rise Time	57 ns
Input Capacitance (Ciss)	1100pF @25V(Vds)
Input Power (Max)	74 W
Fall Time	33 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	74 W
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Size-Length	10.41 mm
Size-Width	4.7 mm
Size-Height	9.01 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
Minimum Packing Quantity	50
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The IRL630PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
Dynamic dV/dt rating
-55 to 150°C Operating temperature range
Repetitive avalanche rated
Logic-level gate drive
Ease of paralleling
RDS (ON) Specified at VGS = 4 and 5V

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- Anti-vibration foam
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