IRLB3036PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLB3036PBF
Manufacturer

Infineon
ChipWorker Part#

CW3142303
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 60V 270A
Documentation

Datasheet

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IRLB3036PBF Specifications

Attribute	Attribute Value

Part Number	IRLB3036PBF
Manufacturer	Infineon
ChipWorker Part#	CW3142303
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	380 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0019 Ω
Polarity	N-Channel
Power Dissipation	380 W
Threshold Voltage	2.5 V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Continuous Drain Current (Ids)	270A
Rise Time	220 ns
Input Capacitance (Ciss)	11210pF @50V(Vds)
Input Power (Max)	380 W
Fall Time	110 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	380000 mW
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Size-Length	10.67 mm
Size-Width	4.83 mm
Size-Height	9.02 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRLB3036PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. It is optimized for logic level drive.
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and di/dt capability
Very low RDS (ON) at 4.5V VGS
Logic level

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