IRLR8259PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLR8259PBF
Manufacturer

Infineon
ChipWorker Part#

CW14182970
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 25V 57A
Documentation

Datasheet

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IRLR8259PBF Specifications

Attribute	Attribute Value

Part Number	IRLR8259PBF
Manufacturer	Infineon
ChipWorker Part#	CW14182970
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	48 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0063 Ω
Polarity	N-Channel
Power Dissipation	48 W
Threshold Voltage	1.9 V
Drain to Source Voltage (Vds)	25 V
Breakdown Voltage (Drain to Source)	25 V
Continuous Drain Current (Ids)	57A
Rise Time	38 ns
Input Capacitance (Ciss)	900pF @13V(Vds)
Fall Time	8.9 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	48W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Obsolete
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRLR8259PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency synchronous buck converters and high frequency isolated DC-to-DC converters with synchronous rectification for telecom use.
Ultra-low gate impedance
Very low RDS (ON) at 4.5V VGS
Logic level

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