ISO7231CDW - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ISO7231CDW
Manufacturer

TI
ChipWorker Part#

CW18617561
Category

Interface Isolator, Digital Isolator
Package

SOIC-16
Description

Digital Isolator, 3Channel, 42ns, 3.15V, 5.5V, SOIC, 16Pins
Documentation

Datasheet

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ISO7231CDW Specifications

Attribute	Attribute Value

Part Number	ISO7231CDW
Manufacturer	TI
ChipWorker Part#	CW18617561
Category	Interface Isolator, Digital Isolator
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	16 Pin
Case/Package	SOIC-16
Supply Voltage (DC)	3.30 V, 5.00 V
Rise/Fall Time	2 ns
Supply Current	17.5 mA
Number of Channels	3 Channel
Number of Positions	16 Position
Data Rate	25.0 Mbps
Rise Time	2 ns
Isolation Voltage	2500 Vrms
Thermal Shutdown	No
Input Current (Min)	10 μA
Maximum Forward Voltage (Max)	5.5 V
Fall Time (Max)	2 ns
Fall Time (Max)	2 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	3.15V ~ 5.5V
Supply Voltage (Max)	5.5 V
Supply Voltage (Min)	3.15 V
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Size-Length	10.5 mm
Size-Width	7.6 mm
Operating Temperature	-40℃ ~ 125℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The ISO7231CDW is a triple-channel Digital Isolator with multiple channel configurations and output enable functions. This device has logic input and output buffers separated by TI"s silicon dioxide (SiO2) isolation barrier. Used in conjunction with isolated power supplies, it blocks high voltage, isolate grounds and prevent noise currents on a data bus or other circuits from entering the local ground and interfering with or damaging sensitive circuitry.
1ns Maximum low channel-to-channel output skew
2ns Maximum low pulse-width distortion (PWD)
1ns Typical at 150Mbps low jitter content
Typical 25-year life at rated working voltage
4kV ESD Protection high electromagnetic immunity
Green product and no Sb/Br
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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