IXDN55N120D1 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXDN55N120D1
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW23602566
Category

IGBT Transistor, IGBT Module
Package

SOT-227-4
Description

Trans IGBT Chip N-CH 1200V 100A 450000mW 4Pin SOT-227B
Documentation

Datasheet

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IXDN55N120D1 Specifications

Attribute	Attribute Value

Part Number	IXDN55N120D1
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW23602566
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SOT-227-4
Number of Positions	4 Position
Polarity	N-Channel
Power Dissipation	450 W
Breakdown Voltage (Collector to Emitter)	1200 V
Input Capacitance (Cies)	3.3nF @25V
Input Power (Max)	450 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	450 W
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Size-Length	38.2 mm
Size-Width	25.07 mm
Size-Height	9.6 mm
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

Product Description

Don"t be afraid to step up the amps in your device when using this IXDN55N120D1 IGBT transistor from Ixys Corporation. Its maximum power dissipation is 450000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single dual emitter configuration. This IGBT transistor has an operating temperature range of -40 °C to 150 °C.

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