IXFH170N10P - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFH170N10P
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW32545628
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247AD N-CH 100V 170A
Documentation

Datasheet

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IXFH170N10P Specifications

Attribute	Attribute Value

Part Number	IXFH170N10P
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW32545628
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.009 Ω
Polarity	N-Channel
Power Dissipation	714 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	170 A
Input Capacitance (Ciss)	6000pF @25V(Vds)
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	715W (Tc)
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Size-Length	16.26 mm
Size-Width	5.3 mm
Size-Height	21.46 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The IXFH170N10P is a Polar™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features reduced static drain-to-source ON-resistance and high power density. It is suitable for switch-mode and resonant-mode power supplies, DC-to-DC converters and laser drivers.
International standard packages
Avalanche rating
Low Qg
Low package inductance
Easy to mount
Space saving

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