IXFR140N30P - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFR140N30P
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW66451650
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

Single N-Channel 300V 300W 185NC Through Hole Power Mosfet - ISOPLUS247
Documentation

Datasheet

IXFR140N30P Global Supplier

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IXFR140N30P Specifications

Attribute	Attribute Value

Part Number	IXFR140N30P
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW66451650
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.026 Ω
Polarity	N-Channel
Power Dissipation	360 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	300 V
Continuous Drain Current (Ids)	82.0 A
Isolation Voltage	2.50 kV
Input Capacitance (Ciss)	14800pF @25V(Vds)
Input Power (Max)	300 W
Operating Temperature (Max)	150 ℃
Power Dissipation (Max)	300W (Tc)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The IXFR140N30P is a Polar™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features reduced static drain-to-source ON-resistance and high power density.
Silicon chip on direct-copper-bond substrate - High power dissipation and isolated mounting surface
Unclamped inductive switching (UIS) rating
Low package inductance - Easy to drive and to protect
Easy to mount
Space saving
2500V Electrical isolation voltage

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