IXTN22N100L - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXTN22N100L
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW64628439
Category

MOSFET, MOSFET Transistor
Package

SOT-227-4
Description

SOT-227B N-CH 1000V 22A
Documentation

Datasheet

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IXTN22N100L Specifications

Attribute	Attribute Value

Part Number	IXTN22N100L
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW64628439
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Number of Pins	4 Pin
Case/Package	SOT-227-4
Polarity	N-CH
Power Dissipation	700 W
Drain to Source Voltage (Vds)	1000 V
Continuous Drain Current (Ids)	22A
Rise Time	35 ns
Input Capacitance (Ciss)	7050pF @25V(Vds)
Fall Time	50 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	700000 mW
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Size-Length	38.2 mm
Size-Width	25.07 mm
Size-Height	9.6 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

This IXTN22N100L power MOSFET from Ixys Corporation can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 700000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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