KSA916YTA - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

KSA916YTA
Manufacturer

ON Semiconductor
ChipWorker Part#

CW43799670
Category

BJT Transistor, BJT
Package

TO-226-3
Description

Bipolar (BJT) Single Transistor, PNP, -120V, 120MHz, 900mW, -800mA, 120
Documentation

Datasheet

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KSA916YTA Specifications

Attribute	Attribute Value

Part Number	KSA916YTA
Manufacturer	ON Semiconductor
ChipWorker Part#	CW43799670
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-226-3
Frequency	120 MHz
Number of Positions	3 Position
Power Dissipation	900 mW
Breakdown Voltage (Collector to Emitter)	120 V
hFE Min	100 @100mA, 5V
Input Power (Max)	900 mW
DC Current Gain (hFE)	120
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	900 mW
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Size-Length	4.9 mm
Size-Width	3.9 mm
Size-Height	8 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
RoHS	RoHS Compliant
Lead-Free Status
ECCN Code	EAR99

Product Description

The KSA916YTA is a PNP Epitaxial Silicon Transistor offers -120V collector base voltage and -800mA collector current. It is suitable for low audio power amplifier applications.
Driver stage amplifier
Complement to KSC2316

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