LF353P - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

LF353P
Manufacturer

TI
ChipWorker Part#

CW90742
Category

Operational Amplifier, OP Amp IC
Package

PDIP-8
Description

Operational Amplifier, Dual, 2 Amplifier, 3MHz, 13V/µs, ± 3.5V to ± 18V, DIP, 8Pins
Documentation

Datasheet

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LF353P Specifications

Attribute	Attribute Value

Part Number	LF353P
Manufacturer	TI
ChipWorker Part#	CW90742
Category	Operational Amplifier, OP Amp IC
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	8 Pin
Case/Package	PDIP-8
Supply Voltage (DC)	18.0 V
Supply Current	3.6 mA
Number of Circuits	2 Circuit
Number of Channels	2 Channel
Number of Positions	8 Position
Power Dissipation	500 mW
Common Mode Rejection Ratio	70 dB
Input Offset Drift	10.0 µV/K
Bandwidth	3 MHz
Slew Rate	13.0 V/μs
Gain Bandwidth Product	3 MHz
Input Offset Voltage	5 mV
Input Bias Current	50 pA
Operating Temperature (Max)	70 ℃
Operating Temperature (Min)	0 ℃
Gain Bandwidth	3 MHz
Power Dissipation (Max)	500 mW
Minimum CMRR Range	70 dB
Supply Voltage (Max)	18 V
Supply Voltage (Min)	7 V
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Size-Length	9.81 mm
Size-Width	6.35 mm
Size-Height	4.57 mm
Operating Temperature	0℃ ~ 70℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/12/17

Product Description

The LF353P is a high-speed JFET-input Operational Amplifier with very low input offset voltage. It requires low supply current yet maintains a large gain-bandwidth product and a fast slew rate. In addition, the matched high-voltage JFET input provides very low input bias and offset currents. The LF353 can be used in applications such as high-speed integrators, digital-to-analog converters, sample-and-hold circuits and many other circuits.
Internally-trimmed offset voltage
50pA Typical low input bias current
0.01pA/√Hz Typical low input noise current
3.6mA Typical low supply current
10¹²R Typical high input impedance
500mW Continuous total power dissipation
150°C Junction temperature
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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