MAT12AHZ - ADI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MAT12AHZ
Manufacturer

ADI
ChipWorker Part#

CW328283
Category

BJT Transistor, BJT
Package

TO-78-6
Description

TO-78 NPN 40V 0.02A
Documentation

Datasheet

MAT12AHZ Global Supplier

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MAT12AHZ Specifications

Attribute	Attribute Value

Part Number	MAT12AHZ
Manufacturer	ADI
ChipWorker Part#	CW328283
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	6 Pin
Case/Package	TO-78-6
Frequency	200 MHz
Number of Positions	6 Position
Polarity	NPN
Breakdown Voltage (Collector to Emitter)	40 V
Continuous Collector Current	0.02A
hFE Min	200
hFE Max	605
DC Current Gain (hFE)	300
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
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Size-Width	9.4 mm
Size-Height	4.7 mm
Material	Silicon
Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MAT12AHZ is a NPN dual-matched Bipolar Transistor Array specifically designed to meet the requirements of ultralow noise audio systems. It has extremely low input base spreading resistance and high current gain. It can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers. Excellent matching of the current gain (ΔhFE) to about 0.5% and low VOS of less than 10µV typical make the MAT12 ideal for symmetrically balanced designs, which reduce high-order amplifier harmonic distortion. Stability of the matching parameters is guaranteed by protection diodes across the base emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base emitter junction. The device is also an ideal choice for accurate and reliable current biasing and mirroring circuits.
Very low voltage noise - 1nV/√Hz max @ 100Hz
0.5% Excellent current gain match
200µV Maximum low offset voltage (VOS)
0.03µV/°C Outstanding offset voltage drift
200MHz High gain bandwidth product
-40 to 85°C Operating temperature range

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