MJD210G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJD210G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW13384404
Category

BJT Transistor, BJT
Package

TO-252-3
Description

DPAK PNP 25V 5A
Documentation

Datasheet

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MJD210G Specifications

Attribute	Attribute Value

Part Number	MJD210G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW13384404
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Frequency	65 MHz
Voltage Rating (DC)	-25.0 V
Current Rating	-5.00 A
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	1.4 W
Gain Bandwidth Product	65 MHz
Breakdown Voltage (Collector to Emitter)	25 V
Thermal Resistance	10℃/W (RθJC)
Continuous Collector Current	5A
hFE Min	45 @2A, 1V
Input Power (Max)	1.4 W
DC Current Gain (hFE)	3
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1400 mW
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.38 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The MJD210G is a 5A PNP bipolar Power Transistor designed for low voltage, low power, high gain audio amplifier applications.
Complementary device
High current-gain - bandwidth product (fT = 65MHz minimum @ IC = 100mA DC)
AEC-Q101 qualified and PPAP capable

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