MJH11020G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJH11020G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW8981148
Category

BJT Transistor, BJT
Package

TO-247-3
Description

TO-247 NPN 200V 15A
Documentation

Datasheet

MJH11020G Global Supplier

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MJH11020G Specifications

Attribute	Attribute Value

Part Number	MJH11020G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW8981148
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	200 V
Current Rating	15.0 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	150 W
Breakdown Voltage (Collector to Emitter)	200 V
Continuous Collector Current	15A
hFE Min	400 @10A, 5V
hFE Max	15000
Input Power (Max)	150 W
DC Current Gain (hFE)	400
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	150000 mW
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Size-Width	4.9 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MJH11020G is a 200V Silicon NPN Bipolar Complementary Darlington Power Transistor designed for use as general purpose amplifiers, low frequency switching and motor control applications. The transistor has monolithic construction.
High DC current gain
Low collector emitter saturation voltage
Collector-emitter sustaining voltage(Vce (sus) = 200VDC minimum)

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