MTB30P06VT4G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MTB30P06VT4G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW128551292
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK P-CH 60V 30A
Documentation

Datasheet

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MTB30P06VT4G Specifications

Attribute	Attribute Value

Part Number	MTB30P06VT4G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW128551292
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Voltage Rating (DC)	-60.0 V
Current Rating	-30.0 A
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	80 mΩ
Polarity	P-Channel
Power Dissipation	3 W
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Breakdown Voltage (Gate to Source)	±15.0 V
Continuous Drain Current (Ids)	30.0 A
Rise Time	25.9 ns
Input Capacitance (Ciss)	2190pF @25V(Vds)
Input Power (Max)	3 W
Fall Time	52.4 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3W (Ta), 125W (Tc)
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Size-Length	10.29 mm
Size-Width	9.65 mm
Size-Height	4.83 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

**30 AMPERES, 60 VOLTS ****R****DS(on) ****= 80 m**Ω
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
**Features**
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
Pb−Free Packages are Available

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