NDP6060 - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NDP6060
Manufacturer

Fairchild
ChipWorker Part#

CW79240466
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

Trans MOSFET N-CH 60V 48A 3Pin(3+Tab) TO-220AB Rail
Documentation

Datasheet

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NDP6060 Specifications

Attribute	Attribute Value

Part Number	NDP6060
Manufacturer	Fairchild
ChipWorker Part#	CW79240466
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	60.0 V
Current Rating	48.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.025 Ω
Polarity	N-Channel
Power Dissipation	100 W
Threshold Voltage	2.9 V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	48.0 A
Rise Time	145 ns
Input Capacitance (Ciss)	1800pF @25V(Vds)
Input Power (Max)	100 W
Fall Time	77 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	100W (Tc)
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Size-Length	10.67 mm
Size-Width	4.7 mm
Size-Height	16.3 mm
Operating Temperature	-65℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The NDP6060 is a N-channel enhancement-mode Power FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. It is particularly suited for low voltage applications such as DC-to-DC converters, PWM motor controls and other battery powered circuits where fast-switching, low in-line power loss and resistance to transients are needed. The rugged internal source-drain diode can eliminates the need for an external Zener diode transient suppressor.
Critical DC electrical parameters specified at elevated temperature
High density cell design for extremely low RDS (ON)

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