NDS331N ,MOSFET, MOSFET Transistor - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Popularity Score

180 points

Part No

NDS331N
Manufacturer

Fairchild
ChipWorker Part#

CW6301038
Category

MOSFET, MOSFET Transistor
Package

SOT-23-3
Description

FAIRCHILD SEMICONDUCTOR NDS331N MOSFET Transistor, N Channel, 1.3A, 20V, 0.11Ω, 4.5V, 700mV
Documentation

Datasheet
Ships from

Moscow
Наличие

48471 pcs In Stock
Estimated Price

$ 0.06

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NDS331N Specifications

Consulting Engineer >>

Attribute	Attribute Value

Part Number	NDS331N
Manufacturer	Fairchild
ChipWorker Part#	CW6301038
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Voltage Rating (DC)	20.0 V
Current Rating	1.30 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.11 Ω
Polarity	N-Channel
Power Dissipation	500 mW
Threshold Voltage	700 mV
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Drain to Source)	20.0 V
Breakdown Voltage (Gate to Source)	8.00 V
Continuous Drain Current (Ids)	1.30 A
Rise Time	25 ns
Input Capacitance (Ciss)	162pF @10V(Vds)
Input Power (Max)	460 mW
Fall Time	25 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	500mW (Ta)
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Size-Length	2.92 mm
Size-Width	1.4 mm
Size-Height	0.94 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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Product Description

The NDS331N is a N-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance. Suited for low voltage applications in PCMCIA cards and other battery powered circuits where fast switching and low in-line power loss are needed in a very small outline surface mount package.
High density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability

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