NGTB35N65FL2WG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NGTB35N65FL2WG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW36934303
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 650V 70A 300000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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NGTB35N65FL2WG Specifications

Attribute	Attribute Value

Part Number	NGTB35N65FL2WG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW36934303
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Power Dissipation	300 W
Breakdown Voltage (Collector to Emitter)	650 V
Reverse recovery time	68 ns
Input Power (Max)	300 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300 W
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Size-Length	16.26 mm
Size-Width	5.3 mm
Size-Height	21.08 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

You can use this NGTB35N65FL2WG IGBT transistor from ON Semiconductor as an electronic switch. Its maximum power dissipation is 300000 mW. It has a maximum collector emitter voltage of 650 V. This device utilizes field stop ii|trench technology. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.

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