NVD2955 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NVD2955
Manufacturer

ON Semiconductor
ChipWorker Part#

CW793514148
Package

DPAK-3
Description

DPAK-3P-CH 60V 12A 180mΩ
Documentation

Datasheet

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NVD2955 Specifications

Attribute	Attribute Value

Part Number	NVD2955
Manufacturer	ON Semiconductor
ChipWorker Part#	CW793514148
Documentation	Datasheet
Case/Package	DPAK-3
Drain to Source Resistance (on) (Rds)	180 mΩ
Polarity	P-CH
Power Dissipation	55 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	12A
	expand all
Minimum Packing Quantity	2500

Product Description

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high−speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.
Features
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Designed for Low−Voltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes
• NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant

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