S29GL01GS11DHI020 - Cypress Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

S29GL01GS11DHI020
Manufacturer

Cypress Semiconductor
ChipWorker Part#

CW20088759
Category

Flash Memory, Flash
Package

FBGA-64
Description

NOR Flash Parallel 3V/3.3V 1Gbit 64M x 16Bit 110ns 64Pin FBGA Tray
Documentation

Datasheet

S29GL01GS11DHI020 Global Supplier

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S29GL01GS11DHI020 Specifications

Attribute	Attribute Value

Part Number	S29GL01GS11DHI020
Manufacturer	Cypress Semiconductor
ChipWorker Part#	CW20088759
Category	Flash Memory, Flash
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	64 Pin
Case/Package	FBGA-64
Supply Voltage (DC)	2.70V (min)
Supply Current	60 mA
Number of Positions	64 Position
Number of Bits	16 Bit
Access Time	110 ns
Access Time(Max)	110 ns
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	2.7V ~ 3.6V
Supply Voltage (Max)	3.6 V
Supply Voltage (Min)	2.7 V
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Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Unknown
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The S29GL01GS11DHI020 is a 1GB GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory fabricated on 65nm process technology. This device offers a fast page access time as fast as 110ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for todays eMBedded applications that require higher density, better performance and lower power consumption.
Lowest address sector protected
Versatile I/O™ - Wide I/O voltage range of 1.65V to VCC
Asynchronous 32-byte page read
Suspend and resume commands for program and erase operations
Status register, data polling and ready/busy pin methods to determine device status
Advanced sector protection - Volatile and non-volatile protection methods for each sector
Common flash interface (CFI) parameter table
100000 Erase cycles for any sector typical
20 Years data retention typical

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