IRFP4668PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFP4668PBF
Manufacturer

Infineon
ChipWorker Part#

CW970180
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247AC N-CH 200V 130A
Documentation

Datasheet

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IRFP4668PBF Specifications

Attribute	Attribute Value

Part Number	IRFP4668PBF
Manufacturer	Infineon
ChipWorker Part#	CW970180
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	520 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.008 Ω
Polarity	N-Channel
Power Dissipation	520 W
Threshold Voltage	5 V
Input Capacitance	10720 pF
Drain to Source Voltage (Vds)	200 V
Continuous Drain Current (Ids)	130A
Rise Time	105 ns
Input Capacitance (Ciss)	10720pF @50V(Vds)
Input Power (Max)	520 W
Fall Time	74 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	520W (Tc)
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Size-Length	15.87 mm
Size-Width	5.31 mm
Size-Height	20.7 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

Product Description

The IRFP4668PBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET featured with improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
Enhanced body diode dV/dt and dI/dt capability
Fully characterized capacitance and avalanche SOA
Drain to source voltage (Vds) of 200V
Gate to source voltage of ±30V
On resistance Rds(on) of 8mohm at Vgs 10V
Power dissipation Pd of 520W at 25°C
Operating junction temperature range from -55°C to 175°C

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