STB55NF06T4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STB55NF06T4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW10328517
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 60V 50A
Documentation

Datasheet

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STB55NF06T4 Specifications

Attribute	Attribute Value

Part Number	STB55NF06T4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW10328517
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Voltage Rating (DC)	60.0 V
Current Rating	50.0 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.015 Ω
Polarity	N-Channel
Power Dissipation	110 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	50.0 A
Rise Time	50 ns
Input Capacitance (Ciss)	1300pF @25V(Vds)
Input Power (Max)	110 W
Fall Time	15 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	110W (Tc)
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Size-Length	10.4 mm
Size-Width	9.35 mm
Size-Height	4.6 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The STB55NF06T4 is a STripFET™ II N-channel Power MOSFET specifically designed to minimize input capacitance and gate charge. The device is suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications and applications with low gate charge driving requirements.
100% Avalanche tested
Exceptional dV/dt capability
-55 to 175°C Operating junction temperature range

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