STD35NF06LT4 ,MOSFET, MOSFET Transistor - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

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164 points

Part No

STD35NF06LT4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW12082390
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

Trans MOSFET N-CH 60V 35A 3Pin(2+Tab) TO-252 T/R
Documentation

Datasheet
Ships from

Moscow
Наличие

9240 pcs In Stock
Estimated Price

$ 1.1

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STD35NF06LT4 Specifications

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Attribute	Attribute Value

Part Number	STD35NF06LT4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW12082390
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	60.0 V
Current Rating	35.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.014 Ω
Polarity	N-Channel
Power Dissipation	80 W
Threshold Voltage	1 V
Input Capacitance	1700 pF
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60.0 V
Breakdown Voltage (Gate to Source)	±16.0 V
Continuous Drain Current (Ids)	17.5 A
Rise Time	100 ns
Input Capacitance (Ciss)	1700pF @25V(Vds)
Input Power (Max)	80 W
Fall Time	20 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	80W (Tc)
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Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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Product Description

The STD35NF06LT4 is a 60V N-channel Power MOSFET developed using unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the MOSFET suitable for use as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer applications and applications with low gate charge driving requirements.
Low threshold drive
Gate charge minimized
High peak power
High ruggedness capability

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