STD6N65M2 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STD6N65M2
Manufacturer

ST Microelectronics
ChipWorker Part#

CW55778759
Category

High Voltage MOS Transistor
Package

TO-252-3
Description

STMICROELECTRONICS STD6N65M2 Power MOSFET, N Channel, 4A, 650V, 1.2Ω, 10V, 3V
Documentation

Datasheet

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STD6N65M2 Specifications

Attribute	Attribute Value

Part Number	STD6N65M2
Manufacturer	ST Microelectronics
ChipWorker Part#	CW55778759
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1.2 Ω
Polarity	N-Channel
Power Dissipation	60 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	650 V
Rise Time	7 ns
Input Capacitance (Ciss)	226pF @100V(Vds)
Fall Time	20 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	60W (Tc)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The STD6N65M2 is a MDmesh™ N-channel Power MOSFET offers Zener-protection and extremely low gate charge. This Power MOSFET developed using MDmesh™ M2 technology which has strip layout and improved vertical structure, the device exhibits low ON-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
100% Avalanche tested

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