STE70NM50 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STE70NM50
Manufacturer

ST Microelectronics
ChipWorker Part#

CW40185700
Category

MOSFET, MOSFET Transistor
Package

ISOTOP-4
Description

STMICROELECTRONICS STE70NM50 MOSFET Transistor, N Channel, 30A, 500V, 45mohm, 10V, 4V
Documentation

Datasheet

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STE70NM50 Specifications

Attribute	Attribute Value

Part Number	STE70NM50
Manufacturer	ST Microelectronics
ChipWorker Part#	CW40185700
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Screw
Number of Pins	4 Pin
Case/Package	ISOTOP-4
Voltage Rating (DC)	500 V
Current Rating	70.0 A
Power Rating	600 W
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	45 mΩ
Polarity	N-Channel
Power Dissipation	600 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	30.0 A
Rise Time	58 ns
Input Capacitance (Ciss)	7500pF @25V(Vds)
Input Power (Max)	600 W
Fall Time	46 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	600W (Tc)
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Size-Length	38.2 mm
Size-Width	25.5 mm
Size-Height	9.1 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STE70NM50 is a MDmesh™ N-channel Zener-protected Power MOSFET associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics. The proprietary strip technique yields overall dynamic performance that is significantly better. It is suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
0.045R RDS (ON)
High dV/dt and avalanche capabilities
Improved ESD capability
Low input capacitance and gate charge
Low gate input resistance
Tight process control
Lowest ON-resistance

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