STGB10NC60KDT4 ,IGBT Transistor, IGBT Module - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

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Part No

STGB10NC60KDT4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW21412961
Category

IGBT Transistor, IGBT Module
Package

TO-263-3
Description

IGBT Single Transistor, 10A, 2.5V, 60W, 600V, TO-263, 3Pins
Documentation

Datasheet
Ships from

Moscow
Наличие

2225 pcs In Stock
Estimated Price

$ 0.5

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STGB10NC60KDT4 Specifications

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Attribute	Attribute Value

Part Number	STGB10NC60KDT4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW21412961
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Voltage Rating (DC)	600 V
Current Rating	10.0 A
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	60 W
Input Capacitance	380 pF
Gate Charge	19.0 nC
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	10.0 A
Rise Time	6.00 ns
Breakdown Voltage (Collector to Emitter)	600 V
Thermal Resistance	62.5 ℃/W
Reverse recovery time	22 ns
Input Power (Max)	65 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	65 W
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Size-Length	10.4 mm
Size-Width	9.35 mm
Size-Height	4.6 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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Product Description

The STGB10NC60KDT4 is a short-circuit rugged IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low ON-state behaviour. It is suitable for SMPS and PFC in both hard switch and resonant topologies.
Low on-voltage drop (VCE(sat))
Low CRES/CIES ratio (no cross-conduction susceptibility)
Very soft ultrafast recovery anti-parallel diode
10µs Short-circuit withstand time

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