STGF7NC60HD - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGF7NC60HD
Manufacturer

ST Microelectronics
ChipWorker Part#

CW9860412
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 600V 10A 25000mW 3Pin(3+Tab) TO-220FP Tube
Documentation

Datasheet

STGF7NC60HD Global Supplier

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STGF7NC60HD Specifications

Attribute	Attribute Value

Part Number	STGF7NC60HD
Manufacturer	ST Microelectronics
ChipWorker Part#	CW9860412
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	600 V
Current Rating	6.00 A
Power Rating	25 W
Polarity	N-Channel
Power Dissipation	25 W
Rise Time	8.50 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	37 ns
Input Power (Max)	25 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	25000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The STGF7NC60HD IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 25000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

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