STGP10NB60SD - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGP10NB60SD
Manufacturer

ST Microelectronics
ChipWorker Part#

CW69645237
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 600V 29A 80000mW 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

STGP10NB60SD Global Supplier

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STGP10NB60SD Specifications

Attribute	Attribute Value

Part Number	STGP10NB60SD
Manufacturer	ST Microelectronics
ChipWorker Part#	CW69645237
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	600 V
Current Rating	20.0 A
Polarity	N-Channel
Power Dissipation	80000 mW
Breakdown Voltage (Drain to Source)	600 V
Continuous Drain Current (Ids)	10.0 A
Rise Time	460 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	37 ns
Input Power (Max)	80 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	80000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency application (<1kHz).
General features
■ HIGH CURRENT CAPABILITY
■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
Applications
■ LIGHT DIMMER
■ STATIC RELAYS
■ MOTOR CONTROL

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