STGPL6NC60DI - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGPL6NC60DI
Manufacturer

ST Microelectronics
ChipWorker Part#

CW75650982
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 600V 14A 56000mW 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

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STGPL6NC60DI Specifications

Attribute	Attribute Value

Part Number	STGPL6NC60DI
Manufacturer	ST Microelectronics
ChipWorker Part#	CW75650982
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Dissipation	56000 mW
Input Capacitance	208 pF
Breakdown Voltage (Collector to Emitter)	600 V
Thermal Resistance	62.5 ℃/W
Reverse recovery time	23 ns
Input Power (Max)	56 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	56000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This powerful and secure STGPL6NC60DI IGBT transistor from STMicroelectronics will make sure your circuit works properly. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 56000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

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