STGW60H65F ,IGBT Transistor, IGBT Module - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

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68 points

Part No

STGW60H65F
Manufacturer

ST Microelectronics
ChipWorker Part#

CW34302566
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 120A 360000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet
Ships from

Moscow
Наличие

9483 pcs In Stock
Estimated Price

$ 4.31

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STGW60H65F Specifications

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Attribute	Attribute Value

Part Number	STGW60H65F
Manufacturer	ST Microelectronics
ChipWorker Part#	CW34302566
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Dissipation	360000 mW
Breakdown Voltage (Collector to Emitter)	650 V
Input Power (Max)	360 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	360000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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Product Description

You can use this STGW60H65F IGBT transistor from STMicroelectronics as an electronic switch. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 360000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

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