STP7NK40Z - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP7NK40Z
Manufacturer

ST Microelectronics
ChipWorker Part#

CW9528732
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220 N-CH 400V 5.4A
Documentation

Datasheet

STP7NK40Z Global Supplier

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STP7NK40Z Specifications

Attribute	Attribute Value

Part Number	STP7NK40Z
Manufacturer	ST Microelectronics
ChipWorker Part#	CW9528732
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	400 V
Current Rating	5.40 A
Power Rating	70 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1 Ω
Polarity	N-Channel
Power Dissipation	70 W
Threshold Voltage	3.75 V
Drain to Source Voltage (Vds)	400 V
Breakdown Voltage (Drain to Source)	400 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	5.40 A
Rise Time	15 ns
Input Capacitance (Ciss)	535pF @25V(Vds)
Input Power (Max)	70 W
Fall Time	12 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	70W (Tc)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STP7NK40Z is a SuperMESH™ N-channel Zener-protected Power MOSFET obtained through an extreme optimization of ST"s well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications.
0.85R RDS (ON)
Extremely high dV/dt capability
100% Avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
-55 to 150°C Operating junction temperature range

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