STS3P6F6 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STS3P6F6
Manufacturer

ST Microelectronics
ChipWorker Part#

CW71839106
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SO P-CH 60V 3A
Documentation

Datasheet

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STS3P6F6 Specifications

Attribute	Attribute Value

Part Number	STS3P6F6
Manufacturer	ST Microelectronics
ChipWorker Part#	CW71839106
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	130 mΩ
Polarity	P-CH
Power Dissipation	2.7 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Continuous Drain Current (Ids)	3A
Rise Time	5.3 ns
Input Capacitance (Ciss)	340pF @48V(Vds)
Input Power (Max)	2.7 W
Fall Time	3.7 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	2.7W (Tc)
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Make an effective common gate amplifier using this STS3P6F6 power MOSFET from STMicroelectronics. Its maximum power dissipation is 2700 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device utilizes stripfet technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

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