STW48NM60N - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STW48NM60N
Manufacturer

ST Microelectronics
ChipWorker Part#

CW2833096
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

STMICROELECTRONICS STW48NM60N Power MOSFET, N Channel, 39A, 600V, 0.055Ω, 10V, 3.2V
Documentation

Datasheet

STW48NM60N Global Supplier

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STW48NM60N Specifications

Attribute	Attribute Value

Part Number	STW48NM60N
Manufacturer	ST Microelectronics
ChipWorker Part#	CW2833096
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.055 Ω
Polarity	N-Channel
Power Dissipation	255 W
Threshold Voltage	3.2 V
Input Capacitance	4285 pF
Drain to Source Voltage (Vds)	600 V
Rise Time	18 ns
Input Capacitance (Ciss)	4285pF @50V(Vds)
Input Power (Max)	255 W
Fall Time	25.5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	330W (Tc)
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
HK STC License	NLR

Product Description

The STW48NM60N is a MDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company"s strip layout to yield one of the world"s lowest ON-resistance. It is therefore suitable for the most demanding high efficiency converters.
100% Avalanche tested
Low gate input resistance

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