STY112N65M5 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STY112N65M5
Manufacturer

ST Microelectronics
ChipWorker Part#

CW13867124
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

Max247 N-CH 650V 96A
Documentation

Datasheet

STY112N65M5 Global Supplier

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STY112N65M5 Specifications

Attribute	Attribute Value

Part Number	STY112N65M5
Manufacturer	ST Microelectronics
ChipWorker Part#	CW13867124
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.019 Ω
Polarity	N-Channel
Power Dissipation	625 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	650 V
Continuous Drain Current (Ids)	96A
Rise Time	79 ns
Input Capacitance (Ciss)	16870pF @100V(Vds)
Input Power (Max)	625 W
Fall Time	140 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	625W (Tc)
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Size-Length	5.9 mm
Size-Width	5.3 mm
Size-Height	20.3 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The STY112N65M5 is a MDmesh™ V N-channel Power MOSFET offers excellent switching performance. This MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics" well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low ON-resistance, which is unmatched among silicon based Power MOSFET, making it especially suitable for applications which require superior power density and outstanding efficiency.
Higher VDSS rating
Higher dV/dt capability
Easy to drive
100% Avalanche tested

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