TIP117G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TIP117G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW9582696
Category

BJT Transistor, BJT
Package

TO-220-3
Description

Trans Darlington PNP 100V 2A 2000mW Automotive 3Pin(3+Tab) TO-220AB Tube
Documentation

Datasheet

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TIP117G Specifications

Attribute	Attribute Value

Part Number	TIP117G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW9582696
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	-100 V
Current Rating	-2.00 A
Output Voltage	100 V
Output Current	2 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	50 W
Breakdown Voltage (Collector to Emitter)	100 V
Thermal Resistance	62.5℃/W (RθJA)
hFE Min	1000 @1A, 4V
Input Power (Max)	2 W
DC Current Gain (hFE)	500
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2000 mW
Input Voltage	5 V
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Size-Length	10.28 mm
Size-Height	15.75 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

Product Description

With one of these PNP TIP117G Darlington transistors from ON Semiconductor, you"ll be able to process much higher current gain values within your circuit. This product"s maximum continuous DC collector current is 2 A, while its minimum DC current gain is 1000@1A@4 V|500@2A@4V. It has a maximum collector emitter saturation voltage of 2.5@8mA@2A V. This Darlington transistor array"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.

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