TPS28225DRBT - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TPS28225DRBT
Manufacturer

TI
ChipWorker Part#

CW16329642
Category

FET Driver
Package

VSON-8
Description

8Pin High Frequency 4A Sink Synchronous MOSFET Driver 8-SON -40℃ to 125℃
Documentation

Datasheet

TPS28225DRBT Global Supplier

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TPS28225DRBT Specifications

Attribute	Attribute Value

Part Number	TPS28225DRBT
Manufacturer	TI
ChipWorker Part#	CW16329642
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	VSON-8
Supply Voltage (DC)	4.50V (min)
Rise/Fall Time	10 ns
Number of Outputs	2 Output
Output Current	6 A
Number of Positions	8 Position
Power Dissipation	2580 mW
Rise Time	10 ns
Output Current (Max)	4 A
Fall Time	5 ns
Fall Time (Max)	10 ns
Fall Time (Max)	10 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	2580 mW
Supply Voltage	4.5V ~ 8.8V
Supply Voltage (Max)	8 V
Supply Voltage (Min)	4.5 V
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Size-Length	3 mm
Size-Width	3 mm
Size-Height	0.88 mm
Operating Temperature	-40℃ ~ 125℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99
HK STC License	NLR

Product Description

The TPS28225DRBT is a 8-pin high frequency sink synchronous MOSFET Driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. It is a solution that provides high efficiency, small size and low EMI emissions. The efficiency is achieved by up to 8.8V gate drive voltage, 14ns adaptive dead-time control, 14ns propagation delay and high-current 2A source and 4A sink drive capability. The 0.4R impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.
Drives two N-channel MOSFETs with 14ns adaptive dead time
Capable to drive MOSFETs with >=40A current per phase
Low-side driver sink on-resistance (0.4R) prevents dV/dT related shoot-through current
3-state PWM input for power stage shutdown
Space saving enable (input) and power good (output) signals on same pin
Thermal shutdown
UVLO protection
Internal bootstrap diode structure
High performance replacement for popular 3-state input drivers
3 to 27V Wide power system train input voltage
2 to 13.2V Amplitude wide input PWM signals
<30ns Input PWM pulses capable to propagate
Green product and no Sb/Br

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