UCC27211DDA - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

UCC27211DDA
Manufacturer

TI
ChipWorker Part#

CW7642844
Category

FET Driver
Package

SOIC-8
Description

MOSFET DRVR 4.5A 2Out Hi/Lo Side Full Brdg/Half Brdg Non-Inv 8Pin HSOP EP
Documentation

Datasheet

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UCC27211DDA Specifications

Attribute	Attribute Value

Part Number	UCC27211DDA
Manufacturer	TI
ChipWorker Part#	CW7642844
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Supply Voltage (DC)	8.00V (min)
Rise/Fall Time	7.2ns, 5.5ns
Number of Outputs	2 Output
Number of Positions	8 Position
Rise Time	600 ns
Fall Time	400 ns
Fall Time (Max)	400 ns
Fall Time (Max)	600 ns
Operating Temperature (Max)	140 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	8V ~ 17V
Supply Voltage (Max)	17 V
Supply Voltage (Min)	8 V
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.55 mm
Operating Temperature	-40℃ ~ 140℃
Product Lifecycle Status	Active
Packaging	Each
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The UCC27211DDA is a 120V Boot High Frequency High-side Low-side Driver that offers several significant performance improvements. Peak output pull-up and pull-down current has been increased to 4A source and 4A sink and pull-up and pull-down resistance have been reduced to 0.9R, thereby allowing for driving large power MOSFETs with minimized switching losses during the transition through the Miller Plateau of the MOSFET. The input structure is now able to directly handle -10VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The switching node (HS pin) of the UCC27211 can handle -18V maximum which allows the high-side channel to be protected from inherent negative voltages caused parasitic inductance and stray capacitance. The UCC27211 (TTL inputs) has increased hysteresis allowing for interface to analogue or digital PWM controllers with enhanced noise immunity.
Drives two N-channel MOSFETs in high-side and low-side configuration with independent inputs
120VDC Maximum boot voltage
4A sink, 4A source output currents
0.9R Pull-up and pull-down resistance
Input pins can tolerate -10 to 20V and are independent of supply voltage range
7.2ns Rise and 5.5ns fall time with 1000pF load
Fast propagation delay times (18ns typical)
2ns Delay matching
Symmetrical under-voltage lockout for high-side and low-side driver
Green product and no Sb/Br
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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