UCC27518DBVT - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

UCC27518DBVT
Manufacturer

TI
ChipWorker Part#

CW29869830
Category

FET Driver
Package

SOT-23-5
Description

MOSFET DRVR 4A 1Out Lo Side Inv 5Pin SOT-23 T/R
Documentation

Datasheet

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UCC27518DBVT Specifications

Attribute	Attribute Value

Part Number	UCC27518DBVT
Manufacturer	TI
ChipWorker Part#	CW29869830
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	5 Pin
Case/Package	SOT-23-5
Supply Voltage (DC)	4.50V (min)
Rise/Fall Time	8ns, 7ns
Number of Outputs	1 Output
Number of Positions	5 Position
Rise Time	12 ns
Fall Time	11 ns
Fall Time (Max)	11 ns
Fall Time (Max)	12 ns
Operating Temperature (Max)	140 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	4.5V ~ 18V
Supply Voltage (Max)	18 V
Supply Voltage (Min)	4.5 V
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Size-Length	3.05 mm
Size-Width	1.75 mm
Size-Height	1.45 mm
Operating Temperature	-40℃ ~ 140℃
Product Lifecycle Status	Active
Packaging	Each
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The UCC27518DBVT is a single-channel high-speed low-side Gate Driver Device can effectively drive MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, it can source and sink high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 17ns. It provides 4A source, 4A sink (symmetrical drive) peak-drive current capability at VDD=12V. It is designed to operate over a wide VDD range of 4.5 to 18V and a wide temperature range of -40 to 140°C. Internal under-voltage lockout (UVLO) circuitry on the VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power switching devices such as GaN power semiconductor devices.
Gate-driver device offering superior replacement of NPN and PNP discrete solutions
Outputs held low during VDD-UVLO (ensures glitch-free operation at power up and power-down)
CMOS input logic threshold (function of supply voltage with hysteresis)
Hysteretic-logic thresholds for high noise immunity
EN pin for enable function (allowed to be no connect)
Output held low when input pins are floating
Input pin absolute maximum voltage levels not restricted by VDD pin bias supply voltage
17ns Typical fast propagation delay
Green product and no Sb/Br

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