ZX5T955ZTA - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZX5T955ZTA
Manufacturer

Diodes
ChipWorker Part#

CW47911533
Category

BJT Transistor, BJT
Package

SOT-89-3
Description

Trans GP BJT PNP 140V 3A 2100mW Automotive 4Pin(3+Tab) SOT-89 T/R
Documentation

Datasheet

ZX5T955ZTA Global Supplier

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ZX5T955ZTA Specifications

Attribute	Attribute Value

Part Number	ZX5T955ZTA
Manufacturer	Diodes
ChipWorker Part#	CW47911533
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SOT-89-3
Frequency	120 MHz
Voltage Rating (DC)	-140 V
Current Rating	-3.00 A
Polarity	PNP
Power Dissipation	2100 mW
Breakdown Voltage (Collector to Emitter)	140 V
Continuous Collector Current	3A
hFE Min	100 @1A, 5V
hFE Max	100
Input Power (Max)	2.1 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2100 mW
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Size-Length	4.6 mm
Size-Width	2.6 mm
Size-Height	1.6 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

Implement this PNP ZX5T955ZTA GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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