ZXTN619MATA - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZXTN619MATA
Manufacturer

Diodes
ChipWorker Part#

CW14502151
Category

BJT Transistor, BJT
RoHS

Lead free / RoHS Compliant
Description

Trans GP BJT NPN 50V 4.3A 2450mW Automotive 3Pin DFN EP T/R
Documentation

Datasheet

ZXTN619MATA Global Supplier

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ZXTN619MATA Specifications

Attribute	Attribute Value

Part Number	ZXTN619MATA
Manufacturer	Diodes
ChipWorker Part#	CW14502151
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	DFN-3
Frequency	165 MHz
Polarity	NPN
Power Dissipation	2.45 W
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	4.3A
hFE Min	100 @2A, 2V
Input Power (Max)	3 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2450 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN ZXTN619MATA GP BJT from Diodes Zetex. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2450 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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