2N4401G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N4401G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW23561107
Category

BJT Transistor, BJT
Package

TO-92-3
Description

TO-92 NPN 40V 0.6A
Documentation

Datasheet

2N4401G Global Supplier

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2N4401G Specifications

Attribute	Attribute Value

Part Number	2N4401G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW23561107
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-92-3
Frequency	250 MHz
Voltage Rating (DC)	40.0 V
Current Rating	600 mA
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	625 mW
Breakdown Voltage (Collector to Emitter)	40 V
Thermal Resistance	83.3℃/W (RθJC)
Continuous Collector Current	0.6A
hFE Min	20
Input Power (Max)	625 mW
DC Current Gain (hFE)	250
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	625 mW
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Size-Length	5.2 mm
Size-Width	4.19 mm
Size-Height	5.33 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/12/17
ECCN Code	EAR99

Product Description

The 2N4401G is a NPN silicon general purpose Bipolar Transistor, designed for use in linear and switching applications.
200°C/W Junction-to-ambient thermal resistance
83.3°C/W Junction-to-case thermal resistance

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