2N5682 - Central Semiconductor
The pictures are for reference only, and the specific specifications can be found in the product manual.
Popularity Score
54 points
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Part No2N5682
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ManufacturerCentral Semiconductor
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ChipWorker Part#CW92356333
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PackageTO-39-3
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Description2N Series 120V 1A NPN Through Hole Silicon High Power Transistor - TO-39
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DocumentationDatasheet
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Ships fromMoscow
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НаличиеIn Stock
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Estimated Price$ 2.67
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2N5682 Specifications
Consulting Engineer >>| Attribute | Attribute Value | |
|---|---|---|
| Part Number | 2N5682 | |
| Manufacturer | Central Semiconductor | |
| ChipWorker Part# | CW92356333 | |
| Documentation | Datasheet | |
| Mounting Style | Through Hole | |
| Number of Pins | 3 Pin | |
| Case/Package | TO-39-3 | |
| Frequency | 30 MHz | |
| Power Dissipation | 1 W | |
| Gain Bandwidth Product | 30 MHz | |
| hFE Min | 40 | |
| Operating Temperature (Max) | 150 ℃ | |
| Operating Temperature (Min) | 65 ℃ | |
| Power Dissipation (Max) | 1000 mW | |
| expand all | ||
| Size-Length | 9.4 mm | |
| Size-Width | 9.4 mm | |
| Size-Height | 6.6 mm | |
| Material | Silicon | |
| Product Lifecycle Status | Active | |
| Packaging | Bulk | |
| RoHS | RoHS Compliant | |
| Lead-Free Status | Lead Free |
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Product Description
- The three terminals of this NPN 2N5682 GP BJT from Central Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 4 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
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