2N5682 - Central Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2N5682
Manufacturer

Central Semiconductor
ChipWorker Part#

CW92356333
Package

TO-39-3
Description

2N Series 120V 1A NPN Through Hole Silicon High Power Transistor - TO-39
Documentation

Datasheet

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2N5682 Specifications

Attribute	Attribute Value

Part Number	2N5682
Manufacturer	Central Semiconductor
ChipWorker Part#	CW92356333
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-39-3
Frequency	30 MHz
Power Dissipation	1 W
Gain Bandwidth Product	30 MHz
hFE Min	40
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	65 ℃
Power Dissipation (Max)	1000 mW
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Size-Length	9.4 mm
Size-Width	9.4 mm
Size-Height	6.6 mm
Material	Silicon
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The three terminals of this NPN 2N5682 GP BJT from Central Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 4 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.

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