2STC4467 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

2STC4467
Manufacturer

ST Microelectronics
ChipWorker Part#

CW78350658
Category

BJT Transistor, BJT
Package

TO-3-3
Description

TO-3P NPN 120V 8A
Documentation

Datasheet

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2STC4467 Specifications

Attribute	Attribute Value

Part Number	2STC4467
Manufacturer	ST Microelectronics
ChipWorker Part#	CW78350658
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3-3
Frequency	20 MHz
Polarity	NPN
Power Dissipation	80000 mW
Gain Bandwidth Product	20 MHz
Breakdown Voltage (Collector to Emitter)	120 V
Continuous Collector Current	8A
hFE Min	70 @3A, 4V
hFE Max	70
Input Power (Max)	80 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	65 ℃
Power Dissipation (Max)	80000 mW
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Size-Length	15.8 mm
Size-Width	5 mm
Size-Height	15.1 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

STMicroelectronics has the solution to your circuit"s high-voltage requirements with their NPN 2STC4467 general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 80000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

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