BD681S - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BD681S
Manufacturer

Fairchild
ChipWorker Part#

CW9235780
Category

BJT Transistor, BJT
Package

TO-126-3
Description

BD Series NPN 40W 100V 4A Through Hole Epitaxial Silicon Transistor - TO-126
Documentation

Datasheet

BD681S Global Supplier

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BD681S Specifications

Attribute	Attribute Value

Part Number	BD681S
Manufacturer	Fairchild
ChipWorker Part#	CW9235780
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Voltage Rating (DC)	100 V
Current Rating	4.00 A
Power Rating	40 W
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	40 W
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	4A
hFE Min	750 @1.5A, 3V
Input Power (Max)	40 W
DC Current Gain (hFE)	750
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	40 W
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Size-Length	8 mm
Size-Width	3.25 mm
Size-Height	11 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The BD681S is a NPN Epitaxial Silicon Transistor designed for medium power linear and switching applications.
Complement to BD682
Medium power Darlington TR

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